Global GaN Power Devices Market To Record Protruding Growth With US$ 1,600.9 Million By 2028

December 2022 | Report Format: Electronic (PDF)

The market for GaN power devices is witnessing significant growth due to rising acceptance in the telecommunications sector, rising need for GaN in radio frequency equipment, and soaring demand for A.C. fast chargers, LiDAR, and wireless power. These devices also have additional benefits than silicon-based ones. However, the market expansion is constrained by the preference for silicon carbide (SiC) in high-voltage semiconductor applications. On the other hand, the need for GaN power devices in electric and hybrid vehicles opens up new business potential for those in the market. The high cost of industrial processes in the supply chain is one of the biggest problems the GaN power device market is now facing.

The goal of telecommunications service providers is to offer networks with increased capacity, decreased latency, and all-pervasive connectivity. The current network can yet be made better in terms of latency, energy efficiency, data rates, and traffic capacity, even though it is an improvement over the previous one. By 2020–2021, 5G is anticipated to be commercially available and offer advantages, including eco-friendly and effective communication networks. GaN is currently widely employed in distributed antenna systems (DAS), tiny cells, and remote radio head network densification. GaN is anticipated to replace other materials in 5G network applications in the future.

North America holds the biggest share of the GaN Power Devices Industry. The market expansion in the area is being fueled by the defence and aerospace industry's growing spending on R&D. Furthermore, it is anticipated that the market in the region will be driven by government support given to semiconductor businesses. For instance, U.S. lawmakers proposed a plan in June 2020 to give semiconductor producers subsidies totalling more than USD 22.8 billion. The bill was designed to encourage the establishment of chip manufacturing in the United States.

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GaN Power Devices Market Report Highlights.

• In February 2021, Efficient Power Conversion announced the launch of EPC9157, that integrates Renesas ISL 81806 with EPC2218 eGAN to achieve more than 90% efficiency.
• In December 2019, FUJITSU Limited launched a new design for producing a diamond film on the surface of GaN HEMTs

GaN POWER DEVICES MARKET SEGMENTATION

The research report published by Market Research Strategy contains industry segments, as below-

GaN Power Devices Production Process Type Outlook (Revenue, USD Million, 2017 - 2028)

• Power Device
• Discrete Power Device
• Integrated Power Device

GaN Power Devices Product Type Outlook (Revenue, USD Million, 2017 - 2028)

• Power Drives
• Supply and Inverter
• Radio Frequency

GaN Power Devices Application Outlook (Revenue, USD Million, 2017 - 2028)

• Telecommunications
• Industrial
• Automotive
• Renewables
• Consumer and Enterprise
• Military, Defense, and Aerospace
• Medicals

GaN Power Devices Regional Outlook (Revenue, USD Million, 2017 - 2028)

• North America (U.S., and Canada)
• Europe (Germany, U.K., France, Italy, Spain etc.)
• Asia-Pacific (China, India, Japan, Indonesia, Malaysia, Australia, South Korea, etc.)
• South America (Brazil, Mexico, Argentina etc.)
• Middle East & Africa (Saudi Arabia, Kuwait, UAE, South Africa etc.)

List of Key Players- GaN Power Devices Market

• CREE
• Infineon
• Qorvo
• Macom
• Microsemi
• Mitsubishi Electric
• Efficient Power Conversion
• GaN Systems
• Navitas Semiconductor
• Toshiba

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